INDUSTRIALLY FABRICATED BIFACIAL Si SOLAR CELLS WITH n+-p-p+ STRUCTURE

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INDUSTRIALLY FABRICATED BIFACIAL Si SOLAR CELLS WITH n+-p-p+ STRUCTURE

Photovoltaic and recombination properties of bifacial solar cells are analyzed. The cells were fabricated ina pilot production line using 6" pseudosquare wafers of 3 to 6 .cm single crystalline Cz Si. Their front efficiency is inthe range 18.1 – 18.8 % with back to front short circuit current ratio 74 - 79 %. The design is characterized by high bulkminority carrier lifetime 0.2 – 1 ms, not degraded during the fabrication process, when good starting wafers were used.Effective back surface recombination is in the range 55 - 95 cm/s. Light trapping due to high back internal reflectioncontributes to current improvement compared to a regular mono facial cell with Al alloyed back. Equivalent efficiency asa quality criteria of a bifacial solar cell is proposed. Routine adjustment of fabrication process promise the increase ofaverage front efficiency above 19 % and equivalent efficiency above 24 %.Keywords: Silicon Solar Cell, Bifacial, p-type, Boron, High-Efficiency. For the full article>>

 

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